Linear magnetoresistance in mosaic-like bilayer graphene
Linear magnetoresistance in mosaic-like bilayer graphene
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DOI：
10.1038/nphys3368
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发表时间：
2015-08-01
期刊：
影响因子：
19.6
通讯作者：
Weber, Heiko B.
中科院分区：
文献类型：
--
作者：
Kisslinger, Ferdinand;Ott, Christian;Weber, Heiko B.
导体的磁阻通常与磁场成二次关系（1），然而，在不同的材料中存在非饱和线性行为的例子（2-6）。这种不寻常现象的具体微观机制被掺杂、迁移率波动和多晶结构的共同出现和相互作用所掩盖（7，8）。双层石墨烯几乎没有掺杂波动，但由于部分位错的密集网络而提供了内置的马赛克镶嵌（9，10）。我们提出了外延双层石墨烯的磁输运测量，表现出强大的和可重复的线性磁阻，持续到B = 62 T在室温及以上，在低温下的量子干涉效应装饰。因此，部分位错对双层石墨烯中的输运性质具有深远的影响，双层石墨烯是一种经常被认为是无位错的系统。它进一步提供了一个清晰和易于处理的模型系统，研究镶嵌导体的不寻常的属性。
The magnetoresistance of conductors usually has a quadratic dependence on magnetic field(1), however, examples exist of non-saturating linear behaviour in diverse materials(2-6). Assigning a specific microscopic mechanism to this unusual phenomenon is obscured by the co-occurrence and interplay of doping, mobility fluctuations and a polycrystalline structure(7,8). Bilayer graphene has virtually no doping fluctuations, yet provides a built-in mosaic tiling due to the dense network of partial dislocations(9,10). We present magnetotransport measurements of epitaxial bilayer graphene that exhibits a strong and reproducible linear magnetoresistance that persists to B = 62 T at and above room temperature, decorated by quantum interference effects at low temperatures. Partial dislocations thus have a profound impact on the transport properties in bilayer graphene, a system that is frequently assumed to be dislocation-free. It further provides a clear and tractable model system for studying the unusual properties of mosaic conductors.