5. Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques
5. Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques
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5. ALD 和雾气 CVD 技术沉积 Al2O3 栅极绝缘体的 GaN 基 MIS-HEMT 的电学特性
DOI：
10.1109/imfedk53601.2021.9637639
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
M Kuzuhara
中科院分区：
文献类型：
--
作者：
S Urano;RS Low;M Faris;M Ishiguro;I Nagase;A Baratov;JT Asubar;T Motoyama;Y Nakamura;Z Yatabe;M Kuzuhara
在这项工作中，我们比较了AlGaN/GaN金属绝缘体-半导体高电子迁移率晶体管(MIS-HEMTs)与由ALD和MIST-CVD制备的栅介质Al_2O_3的性能。而对于具有AlD-Al_2O_3栅绝缘层的MISHEMT，阈值电压随着Al_2O_3厚度的增加而变得更负，我们发现对于具有薄雾-Al_2O_3栅绝缘层的MISHEMT，阈值电压反常地几乎与Al_2O_3厚度无关。我们相信，这些发现对于实现AlGaN/GaN MIS-HEMT的正常工作具有潜在的令人兴奋的应用。
In this work, we compare the performance of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with gate dielectric Al2O3 prepared by either ALD or mist-CVD. While for MIS-HEMTS with ALD-Al2O3 gate insulator, the threshold voltage becomes more negative with increasing thickness of Al2O3 as expected, we found that for MIS-HEMTS with mist-Al2O3 gate insulator, the threshold voltage is anomalously almost independent of Al2O thickness. We believe that these findings have potential exciting applications for achieving normally-off operation in AlGaN/GaN MIS-HEMTs.