Characterization of GaN-based HEMTs as varactor diode devices
Characterization of GaN-based HEMTs as varactor diode devices
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GaN 基 HEMT 作为变容二极管器件的表征
DOI：
10.1109/eumic.2015.7345158
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
O. Lafond
中科院分区：
文献类型：
--
作者：
A. Hamdoun;L. Roy;M. Himdi;O. Lafond
研究了采用0.5 μm和0.15 μm GaN HEMT工艺（加拿大国家研究委员会的GaN500和GaN150工艺）制备的变容管。通过高达20 GHz的直流和射频小信号测量对器件进行了分析和表征。将漏极和源端连接起来，在不改变GaN工艺外延掩模和层数的情况下，实现了基于GaN的异质结势垒变容二极管结构。GaN500和GaN150的Cmax/Cmin比值分别为2.4和3.7，最大截止频率分别为419.2 GHz和770.6 GHz。用简单的物理等效电路对变容管进行了建模，所得结果与实测结果吻合较好。
Varactors fabricated in 0.5 μm and 0.15 μm GaN HEMT technologies (National Research Council of Canada's GaN500 and GaN150 processes) are investigated. The devices were analyzed and characterized via DC and RF small-signal measurements up to 20 GHz. The drain and source terminals were connected, thus realizing a GaN-based heterojunction barrier varactor diode structure without changing the epitaxial masks and layers of the GaN processes. The Cmax/Cmin ratios are about 2.4 and 3.7, while the maximum cut-off frequencies are 419.2 GHz and 770.6 GHz for GaN500 and GaN150, respectively. The varactors are modeled by a simple physical equivalent circuit, and good agreement is obtained with measurements.