Numerical Approach to the Investigation of Performance of Silicon Nanowire Solar Cells Embedded in a SiO2 Matrix
Numerical Approach to the Investigation of Performance of Silicon Nanowire Solar Cells Embedded in a SiO2 Matrix
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DOI：
10.1143/jjap.51.11pe12
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发表时间：
2012-11-01
影响因子：
1.5
通讯作者：
Hirota, Masaki
中科院分区：
文献类型：
--
作者：
Kurokawa, Yasuyoshi;Kato, Shinya;Hirota, Masaki
利用二维和三维器件模拟器研究了p型氢化非晶硅（E-g = 1.9eV）/n型硅纳米线嵌入SiO2/n型氢化非晶硅（E-g = 1.9eV）结构的硅纳米线太阳电池的电学特性，并考虑了量子尺寸效应.由于量子尺寸效应，嵌入SiO2中的SiNW的平均带隙随着直径从10 nm减小到2 nm而从1.15 eV增加到2.68 eV。注意，在AM 1.5G的太阳光下，SiNW太阳能电池的开路电压（V-oc）也随着SiNW的直径减小到2nm而增加到1.46V。这一结果表明，它是可能的，以提高V-oc通过应用量子尺寸效应，和硅纳米线是一个有前途的材料，全硅叠层太阳能电池。(C)2012日本应用物理学会
The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (E-g = 1.9eV)/n-type SiNWs embedded in a SiO2/n-type hydrogenated amorphous silicon oxide (E-g = 1.9eV) structure have been investigated using two- and three-dimensional device simulators, taking into account the quantum size effect. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 to 2.68 eV with decreasing diameter from 10 to 2 nm, owing to the quantum size effect. Note that under sunlight of AM1.5G, the open-circuit voltage (V-oc) of SiNW solar cells also increased to 1.46 V with decreasing diameter of the SiNWs to 2 nm. This result suggests that it is possible to enhance V-oc by applying the quantum size effect, and a SiNW is a promising material for all-silicon tandem solar cells. (C) 2012 The Japan Society of Applied Physics