Liquid phase epitaxial growth and morphology of InSb quantum dots
Liquid phase epitaxial growth and morphology of InSb quantum dots
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DOI：
10.1088/0022-3727/34/6/307
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发表时间：
2001-03
期刊：
影响因子：
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通讯作者：
A. Krier;X. L. Huang;A. Hammiche
中科院分区：
文献类型：
--
作者：
A. Krier;X. L. Huang;A. Hammiche
本文报道了用液相外延法在InAs和GaAs衬底上生长的InSb量子点的形貌。在这两种衬底上都观察到小的和大的量子点，所得到的结构通常与MBE和MOVPE产生的结构相似。小量子点的密度约为1010 cm-2，高度为5-15 nm，纵横比为0.1-0.3。发现小量子点的密度、尺寸和形状随生长温度、过冷度和熔体-衬底接触时间而变化。在GaAs和InAs衬底上生长的大量子点密度分别约为2×107和1×109 cm-2。此外，发现随着晶格失配的减小，量子点直径的差异变得更小。
In this paper we report on the morphology of InSb quantum dots (QDs) grown by liquid phase epitaxy on InAs and GaAs substrates. Small and large QDs are observed on both these two substrates, the resulting structures being generally similar to those produced by MBE and MOVPE. The density of the small QDs is approximately 1010 cm-2, with dimensions of 5-15 nm in height and 0.1-0.3 aspect ratio. The density, size and shape of the small QDs were found to change with growth temperature, supercooling and melt-substrate contact time. The large QDs appear to be at a much lower density, being approximately 2×107 and 1×109 cm-2 for growth on GaAs and InAs substrates, respectively. Furthermore, it was found that the difference in QD diameters becomes smaller as the lattice mismatch decreases.