Degenerated MgZnO films obtained by excessive zinc
Degenerated MgZnO films obtained by excessive zinc
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过量锌获得的退化 MgZnO 薄膜
DOI：
10.1016/j.jcrysgro.2012.03.028
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发表时间：
2012-05-15
影响因子：
1.8
通讯作者：
Shen, D. Z.
中科院分区：
文献类型：
--
作者：
Liu, J. S.;Shan, C. X.;Shen, D. Z.
通过在生长过程中引入过量的锌，制备了退化的Mg0.46Zn0.54O薄膜。Mg0.46Zn0.54O薄膜的电阻率仅为0.053 Ω cm，电子浓度为1.0 × 10（19）cm（-3），远高于ZnO的Mott浓度（2.9 × 10（19）cm（-3））。这种高电子浓度的起源可以归因于薄膜中过量的锌。本文的研究结果为制备具有导电性的MgZnO薄膜提供了一条途径，为ZnO基异质结构和深紫外光电子器件的制备奠定了基础。(C)2012爱思唯尔有限公司版权所有。
By introducing excessive zinc during the growth process, degenerated Mg0.46Zn0.54O films have been prepared. The resistivity of the Mg0.46Zn0.54O films is only 0.053 Omega cm, and the electron concentration is 1.0 x 10(19) cm(-3), which is well above the Mott concentration of ZnO (2.9x 10(19) cm(-3)). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices. (C) 2012 Elsevier B.V. All rights reserved.