Effect of growth stoichiometry on the structural properties of AIN films on thermally nitrided sapphire (1120)
Effect of growth stoichiometry on the structural properties of AIN films on thermally nitrided sapphire (1120)
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生长化学计量对热氮化蓝宝石上 AlN 薄膜结构性能的影响 (1120)
DOI：
10.1002/pssr.201308275
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
上野 耕平
中科院分区：
文献类型：
--
作者：
奥田一志;小山靖人;打田聖;高田十志和;上野 耕平
采用脉冲溅射方法在热氮化蓝宝石(11̄20)衬底上精确控制N/Al比，获得了高质量的AlN外延层。在略富Al的生长条件下，AlN外延层在热氮化蓝宝石上的生长从生长初期开始就是以二维方式进行的，其表面是原子平坦的阶梯状和梯形结构。在薄膜厚度为4 0 0 nm时，0 0 0 2和1̄10 2的X射线摇摆曲线的半高宽分别为87和339角秒。因此，对于低成本制造基于AlGaN的紫外光器件来说，本方法是非常有前途的。
High‐quality AlN epilayers were grown via pulsed sputtering deposition on thermally nitrided sapphire (11̄20) with precise control of the N/Al ratio. Under slightly Al‐rich growth conditions, the growth of AlN epilayers on the thermally nitrided sapphire proceeded in a two‐dimensional mode from the initial stage of growth, and their surfaces were atomically flat stepped and terraced structures. The FWHM values of the X‐ray rocking curves were as low as 87 arcsec and 339 arcsec for the 0002 and 1̄102 diffractions, respectively, at a film thickness of 400 nm. The present approach is therefore quite promising for the low‐cost fabrication of AlGaN‐based UV optical devices.(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)