Pb(Zr, Ti)O3 Thin-Film Preparation by Multitarget Magnetron Sputtering
Pb(Zr, Ti)O3 Thin-Film Preparation by Multitarget Magnetron Sputtering
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多靶磁控溅射法制备 Pb(Zr, Ti)O3 薄膜
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
Y. Miyasaka
中科院分区：
文献类型：
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作者：
K. Hirata;N. Hosokawa;T. Hase;T. Sakuma;Y. Miyasaka
采用磁控溅射方法，在Pt/Ti/SiO2/Si衬底上制备了锆钛酸铅（PZT）铁电薄膜。研究了薄膜的晶体结构和介电性能随衬底温度（Ts）和Pb含量的变化。通过优化PbO靶（PPbO）的射频输入功率，可以精确地控制薄膜中的Pb含量。结果表明，通过适当的Ts和PPbO的组合，可以相当容易地制备出单相钙钛矿薄膜。在Ts=600°C下制备的原子比为Pb/（Zr+Ti）=1.3和Zr/（Zr+Ti）=0.5的膜表现出780的介电常数和19 µC/cm 2的反射极化。
Ferroelectric lead zirconate-titanate (PZT) thin films have been prepared on Pt-coated oxidized Si substrates (Pt/Ti/SiO2/Si) utilizing a multitarget magnetron sputtering system with three Pb(Zr0.5, Ti0.5)O3 targets and one PbO target. Crystal structure and dielectric properties of the films have been studied as functions of substrate temperature (Ts) and Pb content. The Pb content in the film has been precisely controlled by optimizing the rf input power for the PbO target (PPbO). As a result, single-phase perovskite films have been prepared fairly easily with appropriate combinations of Ts and PPbO. A film with atomic ratios of Pb/(Zr+Ti)=1.3 and Zr/(Zr+Ti)=0.5 prepared at Ts=600°C exhibited a dielectric constant of 780 and remanent polarization of 19 µC/cm2.