Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes
Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes
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薄电介质金属氧化物金属 (MOM) 隧道二极管的印刷阵列
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
P. Lugli
中科院分区：
文献类型：
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作者：
M. Bareiss;A. Hochmeister;G. Jegert;U. Zschieschang;H. Klauk;R. Huber;D. Grundler;W. Porod;B. Fabel;G. Scarpa;P. Lugli
采用转移印刷工艺制备了超薄介质(∼，3.6 nm氧化铝)金属-氧化物-金属(MOM)隧道二极管的大面积阵列。MOM二极管表现出良好的隧道行为，适用于将高频交流电流整流为直流(DC)。直接隧穿和Fowler-Nordheim隧穿已经在电流密度超过八个数量级的情况下被观测到。正向电流和反向电流之比高达两个数量级。对器件静态参数的提取进行了模拟，并证实了在印刷隧道二极管的铝/氧化铝界面处存在偶极层。电容测量表明，超薄氧化铝薄膜的介电常数小于体相氧化铝。转移印花工艺的机械产率超过80%，证实了转移印花是一种很有前途的大面积高效制造量子器件的候选方法。
A large area array of metal-oxide-metal (MOM) tunneling diodes with an ultrathin dielectric (∼3.6 nm aluminum oxide) have been fabricated via a transfer-printing process. The MOM diodes exhibit an excellent tunneling behavior that is suitable for rectifying high-frequency ac current into direct current (dc). Direct tunneling and Fowler-Nordheim tunneling have been observed over eight orders of magnitude in current density. The ratio between forward and reverse current is as large as two orders of magnitude. Simulations have been carried out to extract the static device parameters and have confirmed the existence of a dipole layer at the aluminum/aluminum oxide interface of the printed tunneling diodes.Capacitancemeasurements have shown that the permittivity of the ultrathin aluminum oxide film is smaller than that of bulk aluminum oxide. The mechanical yield of the transfer-printing process is better than 80%, confirming that transfer printing is a promising candidate for the efficient fabrication of quantum devices over large areas.