Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography
Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography
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DOI：
10.1063/1.1436275
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发表时间：
2002-02-04
影响因子：
4
通讯作者：
Michl, J
中科院分区：
文献类型：
--
作者：
Liu, K;Avouris, P;Michl, J
开发了一种基于电子束（e束）重叠和过度曝光技术的创新且简单的方法，用于制造具有非常好的电气性能的亚10纳米电极间隙。使用适当的电子束剂量和图案显影时间可以制造具有4至10 nm间距的间隙。对于8-9 nm的间隙，制造产率接近100%，但是对于3-4 nm的间隙，制造产率明显更小。差距泄漏电阻约为10（12）-10（13）Ω，这意味着非常好的隔离。作为一个例子，我们提出了一个单一的8 nm的Co粒子结使用10 nm的间隙的运输研究。(C)2002年美国物理学会。
An innovative and simple method, based on electron-beam (e-beam) overlapping and overexposure techniques, is developed to fabricate sub-10 nm electrode gaps with very good electrical properties. Gaps with 4 to 10 nm spacing can be fabricated using a proper e-beam dose and pattern-developing time. The fabrication yield is nearly 100% for 8-9 nm gaps, but significantly smaller for 3-4 nm gaps. The gap leakage resistance is around 10(12)-10(13) Omega, implying very good isolation. As an example, we present a transport study on a single 8 nm Co particle junction using a 10 nm gap. (C) 2002 American Institute of Physics.