Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy
Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy
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DOI：
10.1063/1.4864279
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发表时间：
2014-02-03
影响因子：
4
通讯作者：
Koshihara, Shin-ya
中科院分区：
文献类型：
--
作者：
Fukumoto, Keiki;Yamada, Yuki;Koshihara, Shin-ya
许多努力已投入到技术的发展，以探测载流子动力学，其中管理许多半导体器件的特性。我们报告直接成像的半导体表面上的电子动力学的时间分辨光电子显微镜使用飞秒激光脉冲。实验利用可变重复率飞秒激光系统来抑制样品充电问题。在GaAs表面上，光生电子的复合和电子在外电场驱动下的横向运动被可视化。根据漂移速度和电位梯度之间的线性关系估计迁移率。(C)2014 AIP Publishing LLC.
Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient. (C) 2014 AIP Publishing LLC.