Doping of Silicon by Neutron Irradiation
Doping of Silicon by Neutron Irradiation
复制标题
通过中子辐照进行硅掺杂
DOI：
10.1149/1.2134070
复制
发表时间：
1975
影响因子：
3.9
通讯作者：
H. Herzer
中科院分区：
文献类型：
--
作者：
H. Herrmann;H. Herzer
纯的未掺杂的Si通过使用反应/sup 30/Si + n = /sup 31/Si + n的中子嬗变来掺杂。伽马.. = /sup 31/P +..贝塔来自该中子轰击的损伤被退火，导致Si的均匀掺杂。这种掺杂方法导致比其他方法更小的扩展和径向电阻。（WDM）
Pure undoped Si is doped by neutron transmutation by using the reaction /sup 30/Si + n = /sup 31/Si + ..gamma.. = /sup 31/P + ..beta... The damage from this neutron bombardment is annealed, resulting in homogeneous doping of the Si. This method of doping results in smaller spreading and radial resistance than other methods. (WDM)