Crystallization behavior of rf-sputtered TiNi thin films
Crystallization behavior of rf-sputtered TiNi thin films
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DOI：
10.1016/s0040-6090(98)01348-0
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发表时间：
1999-02-08
期刊：
影响因子：
2.1
通讯作者：
Wu, SK
中科院分区：
文献类型：
--
作者：
Chen, JZ;Wu, SK
在3英寸直径的n型（100）Si晶片上通过射频沉积Ti-45.6Ni-54.4和Ti-50.4Ni-49.6合金的非晶薄膜。磁控溅射用Avrami法和Kissinger法分别计算了Ti_（45.6）Ni_（54.4）自支撑薄膜从非晶态到晶化的活化能分别为385 kJ mol（-1）和374 kJ mol（-1）。Avrami指数的值分别为2.56、2.65、2.7和3远等温退火温度527、532、542和547 ℃。通过X射线衍射实验，估算出Ti_（50.4）Ni_（49.6）薄膜晶化过程的活化能为287.6kJ·mol ~（-1）。由于残余压应力对时间薄膜和晶化后体积减小的影响，该值远小于Avrami和Kissinger的方法。(C)1999年Elsevier Science S.A. All rights reserved.
Amorphous thin films of Ti45.6Ni54.4 and Ti-50.4 Ni-49.6 alloys were deposited onto 3 inch diameter n-type (100)Si wafer by r.f. magnetron sputtering. The activation energy from an amorphous state to crystallization of the Ti45.6Ni54.4 free-standing thin him was found to be 385 kJ mol(-1) by Avrami's method and 374 kJ mol(-1) by Kissinger's method. The values of Avrami exponents are 2.56, 2.65, 2.7, and 3 far isothermal annealing temperatures of 527, 532, 542, and 547 degrees C respectively. The activation energy for the crystallization process of Ti50.4Ni49.6 film-on-substrate is estimated as 287.6 kJ mol(-1) from X-ray diffraction experiment. This value is much smaller than those from Avrami's or Kissinger's methods owing to the effects of the residual compression stress on time thin film and the volume reduction after crystallization. (C) 1999 Elsevier Science S.A. All rights reserved.