Two-terminal InGaAs microwave amplifier
Two-terminal InGaAs microwave amplifier
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二端InGaAs微波放大器
DOI：
10.1002/mop.31261
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发表时间：
2018
影响因子：
1.5
通讯作者：
Song Aimin
中科院分区：
文献类型：
--
作者：
Wang Hanbin;Zhang Yifei;Shi Yanpeng;Ling Haotian;Wang Qingpu;Liu Fengqi;Yang Fuhua;Xu Kunyuan;Xin Qian;Song Aimin
提出并验证了采用2端InGaAs平面Gunn结构作为微波放大器的可行性。通过实现显著的负差分电阻，峰谷电流比为1.20，我们的器件能够以17 dB的高增益放大微波。与常用的三端晶体管微波放大器相比，所提出的器件不仅结构简单，而且即使在相对较大的特征尺寸下也能够实现高工作频率。通道长度为4 μm的器件具有高达77 GHz的正增益，而2 μm的器件能够放大110 GHz以上的微波。此外，平面Gunn放大器在−45至约0 dBm的宽输入功率范围内具有良好的线性度。尽管没有衬底变薄和散热器，但也证明了良好的操作稳定性。
The feasibility of using a 2‐terminal InGaAs planar Gunn structure as a microwave amplifier is proposed and verified. By achieving a pronounced negative differential resistance with a peak‐to‐valley current ratio of 1.20, our devices are able to amplify microwaves at a high gain of 17 dB. When compared with commonly used 3‐terminal transistor‐based microwave amplifiers, the proposed devices not only have a simple structure but also are capable of achieving high operating frequencies even with relatively large feature sizes. The device with a channel length of 4 μm has a positive gain up to about 77 GHz, and the 2‐μm device is able to amplify microwaves well beyond 110 GHz. Furthermore, the planar Gunn amplifier shows a good linearity over a wide input power range from −45 to about 0 dBm. A good operation stability has also been demonstrated despite having no substrate thinning and heat sink.