Determination of layer structure in Mo/Si multilayers using soft X-ray reflectivity
Determination of layer structure in Mo/Si multilayers using soft X-ray reflectivity
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DOI：
10.1016/s0921-4526(02)01539-9
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发表时间：
2003-01-01
影响因子：
2.8
通讯作者：
Nandedkar, RV
中科院分区：
文献类型：
--
作者：
Modi, MH;Lodha, GS;Nandedkar, RV
讨论了电子束蒸发Mo/Si多层膜的软X射线反射特性。测量是在Indus-1同步加速器储存环上进行的。多层膜中两层材料的相互扩散导致了中间层的形成。为了了解夹层和界面粗糙度对软X射线反射率轮廓的影响，进行了模拟研究。粗糙度参数导致峰值反射率降低，而夹层显著改变反射率分布。为了拟合与角度相关的软X射线反射率分布，四层模型考虑了在界面处形成的夹层。在两个界面，即硅上钼和钼上硅的不对称性需要考虑一个良好的模型拟合的软X射线反射剖面。讨论了Mo/Si多层膜中间层形成的机理。(C)2002 Elsevier Science B. V.保留所有权利。
The soft X-ray reflectivity characterization of Mo/Si multilayer deposited by electron beam evaporation is discussed. The measurements are performed on Indus-1 synchrotron storage ring. The interdiffusion of two-layer materials in multilayer leads to the formation of interlayers. To understand the influence of interlayers and interfacial roughness on soft X-ray reflectivity profile, simulation studies are performed. The roughness parameter leads to reduction in peak reflectivity whereas the interlayers significantly change the reflectivity profile. For fitting the angle-dependent soft X-ray reflectivity profile, a four-layer model accounts for the interlayers formed at the interfaces. Asymmetry at the two interfaces, viz. Si-on-Mo and Mo-on-Si needs to be considered for a good model fitting of the soft X-ray reflected profile. The mechanism, which could lead to the formation of interlayers in Mo/Si multilayer is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.