Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy.
Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy.
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DOI：
10.1021/nn504512u
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发表时间：
2014-11
期刊：
影响因子：
17.1
通讯作者：
Xiaodong Wang;I. Zardo;D. Spirkoska;Sara Yazji;K. Ng;W. S. Ko;C. Chang-Hasnain;J. Finley;G. Abstreiter
中科院分区：
文献类型：
--
作者：
Xiaodong Wang;I. Zardo;D. Spirkoska;Sara Yazji;K. Ng;W. S. Ko;C. Chang-Hasnain;J. Finley;G. Abstreiter
We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35-55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering.
