Plasma-assisted electroepitaxy of GaN layers
Plasma-assisted electroepitaxy of GaN layers
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GaN 层的等离子体辅助电外延
DOI：
10.1002/pssc.201200595
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Novikov S
中科院分区：
文献类型：
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作者：
Novikov S
我们研究了通过等离子体辅助电外延（PAEE）生长GaN层。我们已经使用RF等离子体源在Ga熔体中产生高浓度的N物质，并使用高DC电流将N物质从Ga表面转移到生长界面。我们已经实现了连续的GaN层的PAEE在生长温度低至650 ℃。我们还研究了GaN纳米柱模板上GaN层的PAEE生长。（© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have studied the growth of GaN layers by plasma‐assisted electroepitaxy (PAEE). We have used an RF‐plasma source to produce high concentrations of N species in the Ga melt and a high DC electric current to transfer the N species from the Ga surface to the growth interface. We have achieved continuous GaN layers by PAEE at growth temperatures as low as ∼650oC. We have also investigated PAEE growth of GaN layers on GaN nanocolumn templates. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)