Hard x-ray photoelectron spectroscopy of buried Heusler compounds
Hard x-ray photoelectron spectroscopy of buried Heusler compounds
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DOI：
10.1088/0022-3727/42/8/084010
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发表时间：
2009-04
期刊：
影响因子：
--
通讯作者：
S. Ouardi;B. Balke;A. Gloskovskii;G. Fecher;C. Felser;G. Schönhense;T. Ishikawa;T. Uemura;
中科院分区：
文献类型：
--
作者：
S. Ouardi;B. Balke;A. Gloskovskii;G. Fecher;C. Felser;G. Schönhense;T. Ishikawa;T. Uemura;
本文报道了埋层Heusler薄膜（Co_2MnSi和Co_2FeAl_（0.5）Si_（0.5））的价带高能光电子能谱。测量在由MgO和SiOx覆盖的具有从1至20 nm的不同厚度的绝缘层和附加的AlOx或Ru保护层的薄膜上进行。结果表明，绝缘层不影响Heusler化合物在费米能级附近的高能谱。接近费米能的价带的高分辨率测量表明，通过绝缘层的电子的一个非常大的电子平均自由程。的光谱的掩埋薄膜同意与以前的测量散装样品。两种不同的Heusler化合物的价带谱在低位置的s带以及接近费米能级处表现出明显的差异。
This work reports on high energy photoelectron spectroscopy from the valence band of buried Heusler thin films (Co2MnSi and Co2FeAl0.5Si0.5) excited by photons of about 6 keV energy. The measurements were performed on thin films covered by MgO and SiOx with different thicknesses from 1 to 20 nm of the insulating layer and additional AlOx or Ru protective layers. It is shown that the insulating layer does not affect the high energy spectra of the Heusler compound close to the Fermi energy. The high resolution measurements of the valence band close to the Fermi energy indicate a very large electron mean free path of the electrons through the insulating layer. The spectra of the buried thin films agree well with previous measurements from bulk samples. The valence band spectra of the two different Heusler compounds exhibit clear differences in the low lying s bands as well as close to the Fermi energy.