Design Flow for Hybrid CMOS/Memristor Systems-Part II: Circuit Schematics and Layout
Design Flow for Hybrid CMOS/Memristor Systems-Part II: Circuit Schematics and Layout
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DOI：
10.1109/tcsi.2021.3122381
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发表时间：
2021-12-01
影响因子：
5.1
通讯作者：
Prodromakis, Themistoklis
中科院分区：
文献类型：
--
作者：
Maheshwari, Sachin;Stathopoulos, Spyros;Prodromakis, Themistoklis
忆阻器件的存储器内计算、可重构性、低功率操作以及多态操作的能力使其成为设计具有广泛应用的电子电路的合适候选者。此外，忆阻器与CMOS的可集成性也使其能够应用于逻辑电路中。在这项工作中，我们用例子演示了基于忆阻器的电子产品的设计流程，在定制忆阻器模型已经被集成并验证到我们选择的计算机辅助设计（CAD）工具中之后，执行布局与原理图和布局后检查，包括忆阻器件。我们设想，这一分步指南将忆阻器引入标准集成电路设计流程将是一个有用的参考文件，为设备开发商谁希望基准测试他们的技术和电路设计师谁希望实验与忆阻增强系统。
The capability of in-memory computation, reconfigurability, low power operation as well as multistate operation of the memristive device deems them a suitable candidate for designing electronic circuits with a broad range of applications. Besides, the integrability of memristor with CMOS enables it to use in logic circuits too. In this work, we demonstrate with examples the design flow for memristor-based electronics, after the custom memristor model already being integrated and validated into our chosen Computer-Aided Design (CAD) tool to performing layout-versus-schematic and post-layout checks including the memristive device. We envisage that this step-by-step guide to introducing memristor into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with memristive-enhanced systems.