Microcrystalline silicon thin films studied using spectroscopic ellipsometry
Microcrystalline silicon thin films studied using spectroscopic ellipsometry
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DOI：
10.1063/1.1499980
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发表时间：
2002-08
影响因子：
3.2
通讯作者：
T. Kang;Hosun Lee;S. Park;Jin Jang;S. Lee
中科院分区：
文献类型：
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作者：
T. Kang;Hosun Lee;S. Park;Jin Jang;S. Lee
我们使用光谱椭圆光度法表征了四种不同的微晶硅（μc-Si）薄膜，这些薄膜是通过分别使用固相结晶（SPC）、准分子激光退火（ELA）、镍诱导硅化物介导结晶（Ni-SMC）和场增强硅化物介导结晶（FESMC）方法对预沉积在玻璃基板上的a-Si:H薄膜进行结晶而制备的。使用有效介质近似考虑μc-Si层的有效介电函数的线性回归分析表明，除了氧化物覆盖层外，所有这些薄膜在整个厚度上都是均匀的，并且无论采用何种结晶方法，都完全结晶。在我们的线性回归分析中，硅微晶的复杂介电函数由 Adachi 模型介电函数（MDF）[T.铃木和 S. Adachi，Jpn。 J.应用程序。 Phys., Part1 32, 4900 (1993)]，并且允许 MDF 中临界点 (CP) 的展宽参数...
We used spectroscopic ellipsometry to characterize four different microcrystalline silicon (μc-Si) films, which were fabricated by crystallizing a-Si:H films predeposited on glass substrates using solid phase crystallization (SPC), excimer laser annealing (ELA), Ni induced silicide-mediated crystallization (Ni-SMC), and field enhanced silicide-mediated crystallization (FESMC) method, respectively. A linear regression analysis, which took the effective dielectric function of μc-Si layer into account using effective medium approximation, showed that all these films were homogeneous throughout their thickness except the oxide overlayers, and completely crystallized regardless of the crystallization method. In our linear regression analysis, the complex dielectric function of silicon microcrystallites was represented by the Adachi model dielectric function (MDF) [T. Suzuki and S. Adachi, Jpn. J. Appl. Phys., Part1 32, 4900 (1993)], and the broadening parameters of the critical points (CPs) in MDF were allowed...