Design and characterization of Eu2+-doped Ba4Si6O16 photostimulated phosphor for optical information storage
Design and characterization of Eu2+-doped Ba4Si6O16 photostimulated phosphor for optical information storage
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用于光信息存储的Eu2掺杂Ba4Si6O16光激励荧光粉的设计与表征
DOI:
10.1016/j.jlumin.2020.117556
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发表时间:
2020
影响因子:
3.6
通讯作者:
Zhou Jiangcong
中科院分区:
文献类型:
--
作者:
Zhao Lite;Liu Tianpeng;An Hongxiang;Wang Hongwei;Lv Kangming;Huang Jianhui;Li Xiaoshuang;Zhou Jiangcong
Novel persistent luminescence (PersL) phosphors are emerging as potential candidates for up-to-data information storage devices owing to its large memory capacity, low cost, and rewritable capability. In this study, a novel photostimulated luminescence (PSL) phosphor was successfully developed through co-doping Eu2+and La3+ions in Ba4Si6O16(BSO) host. Firstly, the crystal structure, photoluminescence (PL), and PL excitation (PLE) of BSO:xEu2+were studied systematically. Under the UV light source irradiation, the as-prepared BSO:0.02Eu2+sample exhibits the best PersL decay property. Secondly, by applying the strategy of trap depth engineering, outstanding PersL performance is observed when La3+ions were introduced into BSO:0.02Eu2+as well. Moreover, the trap distribution and dynamics of electron motion in BSO: Eu2+, La3+are characterized using methods of thermoluminescence spectra. Finally, verified by 980/808 nm photostimulation, BSO: Eu2+, La3+shows promising application in optical information systems with a good optical storage capacity. In addition, based on the analysis of experiment and theoretical calculation results, a tentative energy level schematic is proposed to illustrate the mechanism of PersL and PSL in BSO:0.02Eu2+, La3+.