Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy
Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy
复制标题
使用泵浦探针光谱提取 Ge 波导中的载流子寿命
DOI：
10.1063/1.4952432
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发表时间：
2016
影响因子：
4
通讯作者：
D. Thourhout
中科院分区：
文献类型：
--
作者：
S. Srinivasan;M. Pantouvaki;P. Verheyen;G. Lepage;P. Absil;J. Campenhout;D. Thourhout
利用时间分辨红外传输泵浦探测光谱技术，推导了Ge-on-Si光波导中的载流子寿命。利用连续激光研究了不同Ge厚度和宽度的光波导中泵浦诱导的过剩载流子的动力学。由于缺陷辅助的表面复合，这些多余载流子的寿命强烈地依赖于波导的厚度和宽度。得到Ge/Si界面和Ge/SiO_2界面的界面复合速度分别为0.975 × ~4 cm/S和1.45 × ~(10~4) cm/S。
Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers strongly depend on the thickness and width of the waveguide due to defect assisted surface recombination. Interface recombination velocities of 0.975 × 104 cm/s and 1.45 × 104 cm/s were extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively.