Sign reversal of magnetoresistance and inverse spin Hall effect in doped conducting polymers
Sign reversal of magnetoresistance and inverse spin Hall effect in doped conducting polymers
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DOI:
10.1088/1361-648x/aae86f
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发表时间:
2018-11
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影响因子:
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通讯作者:
D. Sun;Y. Zhai;K. V. van Schooten;Chuang Zhang;M. Kavand;H. Malissa;M. Groesbeck;R. Menon;C. Boehme;Z. Vardeny
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文献类型:
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作者:
D. Sun;Y. Zhai;K. V. van Schooten;Chuang Zhang;M. Kavand;H. Malissa;M. Groesbeck;R. Menon;C. Boehme;Z. Vardeny
Conducting polymers, where pristine polymers are doped by active dopants, have been used in a variety of flexible optoelectronic device applications due to their tunable conductivity values. Charge transport in these materials has been intensively studied for over three decades. However, spin transport properties in these compounds have remained elusive. Here, we studied two polaron-dominated and trap-dominated spin transport processes in two types of PEDOT:PSS polymers that are lightly and heavily doped, respectively. Using pulsed spin-pumping and spin-injection techniques, we found the sign of inverse spin Hall effect and magnetoresistance obtained from the lightly doped PEDOT:PSS film can reverse its polarity as a function of temperature and applied bias, in contrast to that in the heavily doped PEDOT:PSS film. Our work provides an alternative approach for studying the spin transport in conducting polymer films.