Absence of temperature dependence of the valence-band spectrum of Co2MnSi
Absence of temperature dependence of the valence-band spectrum of Co2MnSi
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DOI：
10.1103/physrevb.79.100405
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发表时间：
2009-03-01
影响因子：
3.7
通讯作者：
Kanomata, T.
中科院分区：
文献类型：
--
作者：
Miyamoto, K.;Kimura, A.;Kanomata, T.
利用硬 X 射线同步辐射的光电子能谱揭示了 Co2MnSi 的价带电子结构。我们在实验价带谱与广义梯度近似计算的理论态密度之间获得了良好的对应关系。然而，实验价带没有观察到明显的温度依赖性，这需要重新审视基于动态平均场理论的解释，即隧道磁阻比随温度升高而迅速减小。
Valence-band electronic structure of Co2MnSi has been revealed by photoelectron spectroscopy utilizing hard x-ray synchrotron radiation. We have obtained a good correspondence between experimental valence-band spectra and theoretical density of states calculated with generalized gradient aprroximation. However, no distinct temperature dependence has been observed for the experimental valence band, which requires reexamination of the explanation based on the dynamical mean-field theory for the rapid decrease in tunneling magnetoresistance ratio with increasing temperature.