Numerical Calculation of Sub-Micron Hot Spot in Si Devices

Numerical Calculation of Sub-Micron Hot Spot in Si Devices
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硅器件中亚微米热点的数值计算

DOI：
10.1115/ipack2003-35079
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发表时间：
2003
期刊：
--
影响因子：
--
通讯作者：
H. Maruyama
H. Maruyama
中科院分区：
--
文献类型：
--
作者：
K. Fushinobu;H. Maruyama

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对硅MOSFET进行了数值计算。考虑了器件热电行为的共轭性质，求出了晶格温度、电子浓度和电子温度。计算结果表明了同时考虑电子温度和晶格温度对器件建模的重要性；电子温度对计算的电子浓度和晶格温度有很大影响。在器件中观察到了亚微米局部热点，并对其特性进行了讨论。
Numerical calculation of silicon MOSFET is performed. Conjugate nature of the thermal and electrical behavior in the device is considered, and the lattice temperatures is solved as well as the electron concentration and the electron temperature. The calculated results shows the importance of considering both the electron and lattice temperatures for device modeling; the electron temperature has a significant impact on the calculated electron concentration and the lattice temperature. Submicron local hot spot is observed in the device, and its characteristics are discussed.© 2003 ASME