Surface Morphologies of 4H-SiC(1120) and (1100) Treated by High-Temperature Gas Etching
Surface Morphologies of 4H-SiC(1120) and (1100) Treated by High-Temperature Gas Etching
复制标题
高温气蚀处理4H-SiC(1120)和(1100)表面形貌
DOI：
10.1143/jjap.47.8388
复制
发表时间：
2008
影响因子：
1.5
通讯作者：
J. Suda
中科院分区：
文献类型：
--
作者：
M. Horita;T. Kimoto;J. Suda
用原子力显微镜(AFM)研究了HCl/H2高温气体刻蚀对4H-SiC(1120)和(1100)晶面表面形貌的影响。当衬底表面经过化学机械抛光以去除抛光划痕时，气体刻蚀后的(1120)和(1100)面上都获得了非常平坦的表面。气蚀(1120)和(1100)衬底的均方根粗糙度分别为0.07和0.11 nm。在AFM分辨率范围内，在非常平坦的(1120)衬底表面上没有观察到原子台阶。另一方面，气蚀后在(110 0)衬底上观察到明显的阶梯状结构，台阶的高度(2.7？)对应于4H-SiC(1 10 0)晶面之间的晶格间距(=√3a/2)。
The impact of HCl/H2 high-temperature gas-etching on the surface morphologies of 4H-SiC(1120) and (1100) faces is investigated by atomic force microscopy (AFM). Very flat surfaces are obtained on both (1120) and (1100) faces after gas-etching when the substrate surfaces are initially treated by chemical mechanical polishing to remove polishing scratches. The root-mean square roughness values of gas-etched (1120) and (1100) substrates are 0.07 and 0.11 nm, respectively. Within AFM resolution limits no atomic steps are observed on the very flat surfaces of (1120) substrates. On the other hand, clear step-and-terrace structures are observed on (1100) substrates after gas-etching and the height of the steps (2.7 Å) corresponding to the lattice spacing between 4H-SiC(1100) planes (=√3a/2).