Reflected wave phenomenon in motor drive systems using wide bandgap devices
Reflected wave phenomenon in motor drive systems using wide bandgap devices
复制标题
使用宽带隙器件的电机驱动系统中的反射波现象
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
Rachid Darbali Zamora
中科院分区：
文献类型：
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作者：
M. Scott;J. Brockman;Boxue Hu;Lixing Fu;Longya Xu;Jin Wang;Rachid Darbali Zamora
功率器件的快速开关瞬态可能会在馈线长度较长的电机驱动系统中产生较大的电压尖峰。称为反射波现象，先前已证明，给定单位过冲的最大电缆长度会随着开关速度的增加而减小。随着基于宽带隙 (WBG) 半导体的更高开关速度组件的出现，这个问题将在比同等额定硅 (Si) 器件更短的馈电电缆长度中出现。这项工作探讨了氮化镓 (GaN) 器件的反射波现象，并将其与 Si MOSFET 进行比较。创建 PSPICE 模型来预测此问题的行为。并通过实验结果进行了验证。在 600 V GaN 器件、600 V Si CoolMOS MOSFET 和 650 V SiC MOSFET 上进行了测试。
Fast switching transients from power devices can produce large voltage spikes in motor drive systems with long feeder cable lengths. Referred to as the reflected wave phenomenon, it has been previously demonstrated that the maximum cable length for a given per unit overshoot decreases with increasing switching speed. With the emergence of higher switching speed components based on wide bandgap (WBG) semiconductors, this issue will present itself at shorter feeder cable lengths than comparably rated silicon (Si) devices. This work explores the reflected wave phenomenon for a gallium nitride (GaN) device and compares it to a Si MOSFET. A PSPICE model is created to predict the behavior of this issue. It is validated with experimental results. Tests were performed on a 600 V GaN device, a 600 V Si CoolMOS MOSFET, and a 650 V SiC MOSFET.