Ultra-high-Q UV microring resonators based on a single-crystalline AIN platform
Ultra-high-Q UV microring resonators based on a single-crystalline AIN platform
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DOI：
10.1364/optica.5.001279
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发表时间：
2018-10-20
期刊：
影响因子：
10.4
通讯作者：
Tang, Hong X.
中科院分区：
文献类型：
--
作者：
Liu, Xianwen;Bruch, Alexander W.;Tang, Hong X.
紫外波段低损耗光子器件的发展将为经典光学和量子光学开辟新的前景。与其他集成平台相比，氮化铝（AlN）特别有吸引力，因为它具有类似于6.2 eV的巨大带隙和固有的chi（（2））和chi（3））兼容性。在这项工作中，我们证明了一个记录的品质因数为2.1 × 10（5）（光损耗类似于8分贝/厘米）在390 nm的基础上单晶氮化铝微环。低损耗AIN波导代表了UV光子集成电路的一个重要里程碑，因为它具有完全兼容性，可用于未来基于AlGaN的IN发射器和接收器的集成。片上紫外光谱，非线性光学和量子信息处理也可以预见。(C)2018年美国光学学会根据OSA开放获取出版协议的条款
Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AIN) is particularly attractive as it features an enormous bandgap of similar to 6.2 eV and intrinsic chi((2)) and chi((3)) susceptibilities. In this work, we demonstrate a record quality factor of 2.1 x 10(5) (optical loss similar to 8 dB/cm) at 390 nm based on single-crystalline AIN microrings. The low-loss AIN waveguide represents a significant milestone toward UV photonic integrated circuits as it features full compatibility for future incorporation of AlGaN-based IN emitters and receivers. On-chip UV spectroscopy, nonlinear optics, and quantum information processing can also be envisioned. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement