III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
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DOI：
10.1038/nphoton.2009.21
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发表时间：
2009-03-01
期刊：
影响因子：
35
通讯作者：
Megens, Mischa M.
中科院分区：
文献类型：
--
作者：
Wierer, Jonathan J., Jr.;David, Aurelien;Megens, Mischa M.
发光二极管由于其小尺寸、高效率和长寿命而成为传统光源越来越有吸引力的替代品。正在进行的研究致力于通过使用更有效的光产生和光提取结构来提高其性能。在这里，我们展示了通过使用光子晶体实现高提取效率的发光二极管。该结构是在λ =450 nm处发射的III族氮化物薄膜发光二极管。与常规III族氮化物发光二极管相比，光子晶体层提供上级光学模式控制，从而有效地将导模耦合出发光二极管。法布里-珀罗和光子晶体诱导模式中观察到的远场辐射图案，并匹配理论电磁计算。光学模式控制导致高性能的发光二极管，估计未封装的光提取类似于73%，高于迄今为止测量的任何未封装的III族氮化物发光二极管。
Light-emitting diodes are becoming an increasingly attractive alternative to conventional light sources due to their small size, high efficiency and long lifetime. Ongoing research is dedicated to improving their performance through the use of more efficient light-generating and light-extracting structures. Here, we demonstrate light-emitting diodes achieving high extraction efficiency by using photonic crystals. The structures are III-nitride thin-film light-emitting diodes emitting at lambda=450 nm. The photonic-crystal layer provides superior optical mode control compared to conventional III-nitride light-emitting diodes, efficiently coupling guided modes out of the light-emitting diode. Fabry-Perot and photonic-crystal induced modes are observed in the far-field radiation patterns and are matched to theoretical electromagnetic calculations. The optical mode control results in a high-performance light-emitting diode with an estimated unencapsulated light extraction of similar to 73%, higher than any unencapsulated III-nitride light-emitting diode measured to date.