Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps
Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps
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DOI：
10.1109/led.2010.2048195
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发表时间：
2010-05
影响因子：
4.9
通讯作者：
A. Koehler;Amit Gupta;M. Chu;S. Parthasarathy;K. Linthicum;J. W. Johnson;T. Nishida;S. Thompson
中科院分区：
文献类型：
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作者：
A. Koehler;Amit Gupta;M. Chu;S. Parthasarathy;K. Linthicum;J. W. Johnson;T. Nishida;S. Thompson
在消除寄生电荷俘获效应后，获得了AlGaN/GaN高电子迁移率晶体管（HEMT）的可重复规范因子（GF）。在文献中报道了用于AlGaN/GaN HEMT的许多GF，并且电荷陷阱可以对所报道的GF中的四个数量级的变化负责。通过采用连续的subbandgap光激发，不可重复的电荷捕获瞬态的影响被有效地最小化，允许GF被准确地测量。测量的GF（-2.8 ± 0.4）合理地接近于从应力引起的2-DEG片载流子密度和迁移率的变化计算的模拟GF（-7.9 ± 0.2）。
Repeatable gauge factors (GFs) of an AlGaN/GaN high-electron mobility transistor (HEMT) device were obtained after eliminating parasitic charge-trapping effects. Many GFs for AlGaN/GaN HEMTs are reported in the literature, and charge traps could be responsible for the four orders of magnitude variation in reported GFs. By employing continuous subbandgap optical excitation, the effect of nonrepeatable charge-trapping transients was effectively minimized, allowing the GF to be accurately measured. The measured GF (-2.8 0.4) is reasonably close to the simulated GF (-7.9 5.2) calculated from stress-induced changes in the 2-DEG sheet carrier density and mobility.