Write Error Rate in Bias-Magnetic-Field-Free Voltage-Induced Switching in a Conically Magnetized Free Layer
Write Error Rate in Bias-Magnetic-Field-Free Voltage-Induced Switching in a Conically Magnetized Free Layer
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DOI：
10.1103/physrevapplied.17.034063
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发表时间：
2022-03-25
影响因子：
4.6
通讯作者：
Imamura, H.
中科院分区：
文献类型：
--
作者：
Matsumoto, R.;Imamura, H.
基于宏自旋模型，数值计算了椭圆圆柱形锥形磁化自由层电压感应磁化开关的写入错误率。利用Langevin方程进行的模拟表明，在零偏置磁场和室温条件下，理论上可以实现比10（-5）量级更低的反向反向，从而实现单次纠错过程。在一定的热稳定系数下，采用具有较大的面内形状各向异性场和在零偏置电压下适度锥度的自由层可以减小自由层的体积。
Write error rate (WER) in voltage-induced magnetization switching of a conically magnetized free layer with an elliptic cylinder shape is numerically calculated on the basis of the macrospin model. Simulations using the Langevin equation show that a WER lower than the order of 10(-5), which enables practical WER with a single error-correction process, is theoretically feasible at zero-bias magnetic field and room temperature. We also show that WER at a given thermal stability factor and the volume of the free layer can be reduced by adopting the free layer with the larger in-plane shape anisotropy field and a moderate cone at zero-bias voltage.