Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
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DOI：
10.1109/tns.2013.2255313
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发表时间：
2013-06-01
影响因子：
1.8
通讯作者：
Claeys, Cor
中科院分区：
文献类型：
--
作者：
Simoen, Eddy;Gaillardin, Marc;Claeys, Cor
这篇综述文章的目的是以全面的方式描述目前对最先进的绝缘体上硅（SOI）和FinFET CMOS技术的辐射响应的理解。将讨论总电离剂量（TID）响应，重离子微剂量效应和单粒子效应（SEE）。结果表明，窄鳍SOI FinFET结构可以实现非常高的TID容限，而体FinFET可以表现出类似的平面器件的TID响应。由于FinFET的垂直性质，可以获得特定的重离子响应，由此入射角相对于垂直侧壁栅极变得非常重要。相对于SEE，与平面体FinFET器件相比，SOI FinFET中的掩埋氧化物抑制了来自衬底中的电荷收集的扩散尾部。现在，沟道长度和鳍宽度与测试中使用的单个电离离子或激光影响的区域的尺寸相当或更小。这导致了在离子束或激光束SEE测试过程中对单个器件参数和源漏分流的高度敏感性。模拟是用来照亮在辐射测试中观察到的机制和先进的SOI和FinFET晶体管的辐射响应的数值建模/模拟的进展和需求突出。
The aim of this review paper is to describe in a comprehensive manner the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies. Total Ionizing Dose (TID) response, heavy-ion microdose effects and single-event effects (SEEs) will be discussed. It is shown that a very high TID tolerance can be achieved by narrow-fin SOI FinFET architectures, while bulk FinFETs may exhibit similar TID response to the planar devices. Due to the vertical nature of FinFETs, a specific heavy-ion response can be obtained, whereby the angle of incidence becomes highly important with respect to the vertical sidewall gates. With respect to SEE, the buried oxide in the SOI FinFETs suppresses the diffusion tails from the charge collection in the substrate compared to the planar bulk FinFET devices. Channel lengths and fin widths are now comparable to, or smaller than the dimensions of the region affected by the single ionizing ions or lasers used in testing. This gives rise to a high degree of sensitivity to individual device parameters and source-drain shunting during ion-beam or laser-beam SEE testing. Simulations are used to illuminate the mechanisms observed in radiation testing and the progress and needs for the numerical modeling/simulation of the radiation response of advanced SOI and FinFET transistors are highlighted.