岡本 徹 他3名: "Transition from Quantum Hall Metal to Insulator Induced by Floating-up of Extended-State Bands in Si-MOSFET's" Proceedings of 11th International Conference on High Magnetic Fields in Semiconductor Physics(to be published by World Scientific). 1
岡本 徹 他3名: "Transition from Quantum Hall Metal to Insulator Induced by Floating-up of Extended-State Bands in Si-MOSFET's" Proceedings of 11th International Conference on High Magnetic Fields in Semiconductor Physics(to be published by World Scientific). 1
复制标题
Toru Okamoto等3人：“Transition from Quantum Hall Metal to Insulator Induced by Floating-up of Extended-State Bands in Si-MOSFETs”第11届国际半导体物理高磁场会议论文集（将由World Scientific出版）。 1
DOI：
--
复制
发表时间：
--
期刊：
影响因子：
--
通讯作者：
中科院分区：
文献类型：
--
作者：
