Development of numerically controlled local wet etching
Development of numerically controlled local wet etching
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DOI：
10.1016/j.stam.2007.02.003
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发表时间：
2007-04-01
影响因子：
5.5
通讯作者：
Yamamura, Kazuya
中科院分区：
文献类型：
--
作者：
Yamamura, Kazuya
数控局部湿法蚀刻（NC-LWE）已被开发为一种新型非接触式子孔径确定性成形方法，用于制造超精密光学器件或精加工功能材料。在该方法中，使用通过同轴布置蚀刻剂的供给部和抽吸部而构成的组合喷嘴来形成局部湿蚀刻区域。工件表面任何位置的去除体积由去除函数和喷嘴停留时间分布的卷积决定。该方法的加工性能对振动或热变形等外部干扰不敏感，因为去除过程是在非接触条件下进行的。我应用NC-LWE精加工了尺寸为6英寸的由合成石英玻璃制成的6英寸光掩模基板，仅通过一次NC-LWE校正过程将基板的平整度从260纳米提高到69纳米。 (C) 2007 NIMS 和 Elsevier Ltd. 保留所有权利。
Numerically controlled local wet etching (NC-LWE) has been developed as a novel noncontact subaperture deterministic figuring method for fabricating ultraprecision optics or for finishing functional materials. In this method, a localized wet etching area is formed using a combined nozzle that is constructed by coaxially arranging the supply part and the suction part of the etchant. The removal volume anywhere on the workpiece surface is determined by the convolution of the removal function and the dwelling time distribution of the nozzle. The machining properties of this method are insensitive to external disturbances, such as vibration or thermal deformation, because the removal process is performed under a noncontact condition.I applied NC-LWE to finish a 6 in photomask substrate made of synthesized quartz glass having size of 6 in, and improved the flatness of the substrate from 260 to 69 nm by only one NC-LWE correcting process. (C) 2007 NIMS and Elsevier Ltd. All rights reserved.