AES and XPS Studies of Semi‐Insulating Polycrystalline Silicon (SIPOS) Layers
AES and XPS Studies of Semi‐Insulating Polycrystalline Silicon (SIPOS) Layers
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半绝缘多晶硅 (SIPOS) 层的 AES 和 XPS 研究
DOI：
10.1149/1.2128793
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发表时间：
1979
期刊：
影响因子：
--
通讯作者：
A. Goodman
中科院分区：
文献类型：
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作者：
J. H. Thomas;A. Goodman
定量俄歇电子能谱（AES）和X射线光电子能谱（XPS）已被用于表征通过化学气相沉积从Si 11 4和N20的混合物生长的半绝缘多晶硅（SIPOS）层。使用各种值的y（沉积气流中N2 O与Si 114的体积比）来产生具有宽范围氧含量的层。通过AES和XPS作为7的函数确定的氧浓度值被认为是在合理的协议与通过电子探针微量分析确定的值。Si 2 p结合能谱的分析表明存在元素硅以及氧化硅，主要是Si 20和Si 203。SIPOS层的离子溅射被证明可以改变未溅射表面的表面成分。通过化学气相沉积（CVD）生产的掺氧多晶硅层目前被用于各种硅器件钝化应用（1，2）。这种层通常由首字母缩写SIPOS（半绝缘多晶硅）来指代。最近的论文（3-5）将退火SIPOS描述为由至少两个单独的相（硅和氧化硅）组成的复合材料。
Quantitative Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) have been used to characterize semi-insulating polycrystalline silicon (SIPOS) layers grown from a mixture of Sill4 and N20 by chemical vapor deposition. Various values of, y (volumetric ratio of N20 to Sill4 in the deposition gas stream) were used to produce layers with a wide range of oxygen content. Oxygen concentration values determined by AES and XPS as a function of 7 were found to be in reasonable agreement with values determined by electron probe microanalysis. Analyses of the Si 2p binding energy spectra indicate the presence of elemental silicon as well as silicon oxides, predominantly Si20 and Si203. Ion sputtering of the SIPOS layers was shown to modify the surface composition from that of the unsputtered surface.Oxygen-doped polycrystalline silicon layers produced by chemical vapor deposition (CVD) are currently being used for a variety of silicon-devicepassivation applications (1, 2). Such layers are commonly referred to by the acronym SIPOS (semi-insulating polycrystalline silicon). Recent papers (3-5) describe annealed SIPOS as a composite material consisting of at least two separate phases (silicon and silicon oxide).