Effect of molybdenum deposition temperature on the performance of CuIn1−xGaxSe2 Solar Cells
Effect of molybdenum deposition temperature on the performance of CuIn1−xGaxSe2 Solar Cells
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钼沉积温度对 CuIn1−xGaxSe2 太阳能电池性能的影响
DOI：
10.1109/pvsc.2015.7355890
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
R. Collins
中科院分区：
文献类型：
--
作者：
P. Pradhan;P. Aryal;Abdel;P. Koirala;Jian Li;N. Podraza;A. Rockett;S. Marsillac;R. Collins
研究了背接触沉积钼(Mo)中衬底温度对其结构演变、光学性质以及最重要的是过沉积CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>太阳电池性能的影响。在25~385℃的衬底温度范围内，在热氧化硅片上直流溅射了一系列Mo薄膜，用实时椭圆偏振光谱仪(RTSE)测量了Mo薄膜的体相和表面粗糙层厚度以及复介电函数的变化。制备了CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>太阳电池，以比较在25℃和250℃下在钠钙玻璃上沉积的Mo背接触膜。
We have studied the effect of substrate temperature in molybdenum (Mo) back contact deposition on its structural evolution, optical properties, and most importantly, the over-deposited CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> solar cell performance. A series of Mo thin films was DC sputtered onto thermally oxidized Si at substrate temperatures from 25°C to 385°C. Real time spectroscopic ellipsometry (RTSE) was performed to determine the evolution of the bulk and surface roughness layer thicknesses as well as the complex dielectric functions of the Mo films. CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> solar cells were fabricated for comparison on Mo back contact films deposited on soda lime glass at 25°C and 250°C.