Focused ion beam implantation of Ga in InP studied by SIMS and dynamic computer simulations
Focused ion beam implantation of Ga in InP studied by SIMS and dynamic computer simulations
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通过 SIMS 和动态计算机模拟研究 Ga 在 InP 中的聚焦离子束注入
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
H. Gnaser
中科院分区：
文献类型：
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作者：
H. Gnaser
用Cs~+初级离子溅射，用SIMS研究了30keV Ga~+离子在单晶InP中的聚焦注入。共使用了9种不同的注入剂量，注入量从1×1013到1×1017个/cm~2，注入面积为50×50µm~2。用SIMS深度剖面法测定了这些注入物的Ga浓度分布。这种30keV的Ga注入也用动态蒙特卡罗模拟程序进行了模拟，该程序考虑了由于Ga的掺入而引起的近表面成分的逐渐变化。在这两种方法中，Ga含量随注量的增加基本呈线性增长，最高可达∼1×1016 cm−2；对于较高注量，Ga的峰值浓度接近饱和水平，约在(0.5-1)×10 17 cm−2处达到饱和水平，相当于∼的10%。计算得到的Ga浓度分布与实测值吻合较好。从SIMS实验中得到的In P中Ga+离子的最可能范围是∼23 nm，与模拟值非常接近。版权所有©2010 John Wiley&Sons，Ltd.
Focused ion beam implantation of 30 keV Ga+ ions in single‐crystalline InP was investigated by SIMS, using Cs+ primary ions for sputtering. Nine different implantation fluences ranging from 1 × 1013 to 1 × 1017 Ga+ ions/cm2 were used, with implanted areas of 50 × 50 µm2. The Ga concentration distributions of these implants were determined by SIMS depth profiling. Such 30 keV Ga implantations were also simulated by a dynamic Monte Carlo simulation code that takes into account the gradual change of the near‐surface composition due to the Ga incorporation. In both approaches, an essentially linear increase of the Ga content with fluence is found up to ∼1 × 1016 cm−2; for higher fluences, the Ga peak concentration approaches a saturation level which is reached at about (0.5–1) × 1017 cm−2 and amounts to ∼10%. The measured and simulated concentrations of the Ga distributions are in good agreement. The most probable range of the Ga+ ions in InP obtained from the SIMS experiments is ∼23 nm and matches closely with the value from the simulations. Copyright © 2010 John Wiley & Sons, Ltd.