Synthesis of [7]phenacene incorporating tetradecyl chains in the axis positions and its application in field-effect transistors
Synthesis of [7]phenacene incorporating tetradecyl chains in the axis positions and its application in field-effect transistors
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DOI：
10.1039/d0tc00272k
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发表时间：
2020-06-14
影响因子：
6.4
通讯作者：
Goto, Kenta
中科院分区：
文献类型：
--
作者：
Okamoto, Hideki;Hamao, Shino;Goto, Kenta
采用新型的苯并菲分子3，12-双十四烷基[7]苯并菲（（C14 H29）（2）-[7]苯并菲）和固体栅介质或双电层电容器与离子液体（1-丁基-3-甲基咪唑六氟磷酸盐（bmim[PF 6]））制备了场效应晶体管（FET）。利用马洛里光化学反应，合成了一个新的化合物（C_（14）H_（29））（2）-[7]苯并菲。使用X射线衍射、扫描隧道显微镜/光谱（STM和STS）、吸收光谱和光电子产额光谱测定其晶体结构和电子性质，其显示单斜晶格（空间群P2（1）（no.4））和类似于3.0 eV的能隙。STM图像清楚地显示了（C14 H29）（2）-[7]苯并菲的分子结构，以及封闭的分子堆叠，表明烷基链之间存在强烈的紧固效应。在SiO2/Si衬底上形成的（C14 H29）（2）-[7]苯并菲薄膜的X射线衍射图案表明，该分子以相对于表面的法线轴成30度的倾斜角站立在表面上。FET特性以双端测量模式记录，显示p沟道常关特性。对于具有SiO（2）栅极电介质的（C14 H29）（2）-[7]苯并菲薄膜FET，场效应迁移率μ的平均值为1.6（3）cm（2）V（-1）s（-1），对于具有bmim[PF 6]的（C14 H29）（2）-[7]苯并菲薄膜EDL FET，场效应迁移率μ的平均值为6（4）× 10（-1）cm（2）V（-1）s（-1）。因此，与母体[7]苯并菲相比，使用（C14 H29）（2）-[7]苯并菲薄膜的FET获得更高的FET性能。本研究为通过在苯并菲分子中引入烷基链来实现高性能场效应晶体管开辟了一条途径。
Field-effect transistors (FETs) were fabricated using a new type of phenacene molecule, 3,12-ditetradecyl[7]phenacene ((C14H29)(2)-[7]phenacene), and solid gate dielectrics or an electric double layer (EDL) capacitor with an ionic liquid (1-butyl-3-methylimidazolium hexafluorophosphate (bmim[PF6])). The new molecule, (C14H29)(2)-[7]phenacene, was efficiently synthesizedviathe Mallory photoreaction. Its crystal structure and electronic properties were determined, using X-ray diffraction, scanning tunneling microscopy/spectroscopy (STM and STS), absorption spectroscopy, and photoelectron yield spectroscopy, which showed a monoclinic crystal lattice (space groupP2(1)(no. 4)) and an energy gap of similar to 3.0 eV. The STM image clearly showed the molecular structure of (C14H29)(2)-[7]phenacene, as well as the closed molecular stacking, indicative of a strong fastener effect between alkyl chains. The X-ray diffraction pattern of thin films of (C14H29)(2)-[7]phenacene formed on a SiO2/Si substrate suggested that the molecule stood on the surface with an inclined angle of 30 degrees with respect to the normal axis of the surface. The FET properties were recorded in two-terminal measurement mode, showing p-channel normally-off characteristics. The averaged values of field-effect mobility,mu, were 1.6(3) cm(2)V(-1)s(-1)for a (C14H29)(2)-[7]phenacene thin-film FET with a SiO(2)gate dielectric and 6(4) x 10(-1)cm(2)V(-1)s(-1)for a (C14H29)(2)-[7]phenacene thin-film EDL FET with bmim[PF6]. Thus, higher FET performance was obtained with an FET using a thin film of (C14H29)(2)-[7]phenacene compared to parent [7]phenacene. This study could pioneer an avenue for the realization of high-performance FETs through the addition of alkyl chains to phenacene molecules.