New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing
New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing
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使用低温远程等离子体处理制造器件质量 Ge/GeO2/SiO2 界面的新方法
DOI：
10.1116/1.582331
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
G. Lucovsky
中科院分区：
文献类型：
--
作者：
R. Johnson;H. Niimi;G. Lucovsky
研究表明，低温（300°C）远程等离子体增强处理可以单独控制硅衬底上的界面形成和大块氧化物沉积。等离子体处理之后是低热预算热退火，例如在900°C下30 s。在本文中，该工艺已被修改并应用于锗衬底，以确定它是否能提供一个成功的途径，以达到器件质量的锗介电界面。新工艺还采用了三步工艺：(i) O2/He等离子体辅助的锗表面预沉积氧化形成表面氧化锗钝化膜，（ii）通过SiH4和O2远程等离子体增强化学气相沉积沉积SiO2体膜，（iii）沉积后退火进行化学和结构弛豫。通过预沉积，等离子辅助氧化步骤改进了所得界面，但对于器件应用来说仍然存在太多缺陷。
It has been shown that low temperature (300 °C) remote plasma enhanced processing can separately and independently control interface formation and bulk oxide deposition on silicon substrates. Plasma processing is followed by a low thermal budget thermal anneal, e.g., 30 s at 900 °C. In this article, this process has been modified and applied to germanium substrates to determine if it can provide a successful pathway to device-quality Ge–dielectric interfaces. The new process also employs a three-step process: (i) an O2/He plasma-assisted, predeposition oxidation of the germanium surface to form a superficial germanium–oxide passivating film, (ii) deposition of a SiO2 bulk film by remote plasma-enhanced chemical vapor deposition from SiH4 and O2, and (iii) a postdeposition anneal for chemical and structural relaxation. The resulting interfaces are improved by the predeposition, plasma-assisted oxidation step, but are still far too defective for device applications.