Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film
Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film
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DOI：
10.1063/1.2839404
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发表时间：
2008-01-28
影响因子：
4
通讯作者：
Yang, Deren
中科院分区：
文献类型：
--
作者：
Cheng, Peihong;Li, Dongsheng;Yang, Deren
通过局域表面等离子激元的耦合，观察到了氧化锌薄膜的发光增强。通过在氧化锌薄膜上溅射银岛，其透过银岛薄膜的带隙发射提高了三倍，同时缺陷发射被猝灭。发现增强主要依赖于银岛的溅射时间，而时间与银岛的大小有关。此外，发现氧化锌发射带与银岛局域表面等离子体共振带之间的相对光谱位置对光致发光的增强或猝灭起决定性作用，表明银岛尺寸和局域表面等离子体共振带位置可以控制氧化锌薄膜的发射强度。
Enhancement of the light emission of ZnO films was observed by coupling through localized surface plasmons. By sputtering Ag islands onto ZnO films, their band gap emission coming through the Ag island films was enhanced by threefolds, while the defect emission was quenched. The enhancement was found to be mainly dependent on the sputtering time of the Ag islands, which is related to the island size. Furthermore, the relative spectral position between the ZnO emission band and the localized surface plasmon resonance bands of Ag islands was found to be decisive for the enhancement or quenching of photoluminescence, indicating that the emission intensity of ZnO films can be controlled by the Ag island size and the localized surface plasmon resonance band position.