Aging-aware voltage scaling
Aging-aware voltage scaling
复制标题
老化感知电压调节
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
J. Henkel
中科院分区：
文献类型：
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作者：
V. M. V. Santen;H. Amrouch;N. Parihar;S. Mahapatra;J. Henkel
随着晶体管的特征尺寸开始接近原子水平，老化效应已经成为可靠性方面的主要问题之一。近年来，老化效应已成为电压标度的主题，因为后者进入亚μs范围。因此，老化问题从单纯的长期问题（采用先进技术）转变为短期和长期的可靠性问题。本文将老化与电压标度联系起来，首次探索和量化老化的短期效应。我们提出了电压缩放的“老化意识”，这对于维持运行时可靠性是必不可少的。否则，可能会由于老化的短期影响而产生短暂的误差。与最先进的技术相比，我们的老化感知电压缩放优化了边际保护带开销的短期和长期老化效应。
As feature sizes of transistors began to approach atomic levels, aging effects have become one of major concerns when it comes to reliability. Recently, aging effects have become a subject to voltage scaling as the latter entered the sub-μs regime. Hence, aging shifted from a sole long-term (as treated by state-of-the-art) to a short and long-term reliability challenge. This paper interrelates both aging and voltage scaling to explore and quantify for the first time the short-term effects of aging. We propose “aging-awareness” with respect to voltage scaling which is indispensable to sustain runtime reliability. Otherwise, transient errors, caused by the short-term effects of aging, may occur. Compared to state-of-the-art, our aging-aware voltage scaling optimizes for both short-term and long-term aging effects at marginal guardband overhead.