Erosion of solid neon by keV electrons.
Erosion of solid neon by keV electrons.
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keV 电子对固体氖气的侵蚀。
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
Claussen
中科院分区：
文献类型：
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作者：
Schou;Borgesen;Ellegaard;Sorensen;Claussen
从实验和理论上研究了keV电子对固体氖的侵蚀。电子溅射以及温度增强升华研究的频率变化测量的石英晶体上，或在某些情况下，由反射电子的强度变化。当衬底温度高于7 K时，腐蚀产额随温度的升高而增加.在此温度以下，通过电子跃迁的溅射是主要过程。对于2 keV电子，当膜厚约为（5- 7）× 10 ~（16）/ Ne原子/cm ~（2/）时，产额有明显的最小值。厚膜的溅射产额在1.2- 1.5keV有最大值。解释的结果与随后的衰减的表面的激发的扩散。从这个模型和实验结果可以导出特征扩散长度约为1 × 10 ~（17）/ Ne原子/cm ~ 2/。最终的粒子喷射是由表面俘获激子的衰变或解离复合驱动的。产率的大小表明，在表面处的去激氖粒子引起进一步溅射。来自电子-核碰撞的直接溅射对产率没有显著贡献。
The erosion of solid neon by keV electrons has been studied experimentally and theoretically. Electronic sputtering as well as temperature-enhanced sublimation are investigated by a frequency-change measurement on a quartz crystal or in some cases by the change in intensity of reflected electrons. The erosion yield increases with increasing temperature for substrate temperatures above 7 K. Below this temperature sputtering via electronic transitions is the dominant process. The yield shows a clear minimum for film thicknesses about (5--7) x 10/sup 16/ Ne atoms/cm/sup 2/ for 2-keV electrons. The sputtering yield for thick films has a maximum at 1.2--1.5 keV. The results are explained by the diffusion of excitations to the surface with subsequent decay. From this model and the experimental results one derives a characteristic diffusion length of about 1 x 10/sup 17/ Ne atoms/cm/sup 2/. The eventual particle ejection is driven by decay of surface-trapped excitons or by dissociative recombination. The magnitude of the yield indicates that deexciting neon particles at the surface induce further sputtering. Direct sputtering from electron-nucleus collisions does not contribute significantly to the yield.