Effect of Hydrogen Pressure on the Hydrogen Overvoltage on Bright Rhodium
Effect of Hydrogen Pressure on the Hydrogen Overvoltage on Bright Rhodium
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DOI：
10.1149/1.2427717
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发表时间：
1960-05
影响因子：
3.9
通讯作者：
S. Schuldiner
中科院分区：
文献类型：
--
作者：
S. Schuldiner
测定了氢压对光亮活性铑上氢过电压的影响。结果表明，过电压机制受2 H，ds~ H~步骤控制。动力学参数的机制进行了定量测定，包括吸附原子氢的表面覆盖。朗缪尔吸附等温线是由平衡状态下氢原子的表面覆盖率与溶液上方氢分子分压之间的关系得出的，在以前关于氢压力对亮铂过电压影响的研究中（1），压力效应可以用来确定动力学参数和建立合理的反应机理。本文研究了压力对亮铑上氢生成和电离反应的影响。通过在快速搅拌的强酸溶液中使用这种金属，扩散效应几乎被消除，并且可以对动力学参数进行定量测定。
The effect of hydrogen pressure on the hydrogen overvoltage on bright, active rhodium was determined. The data indicated that the overvoltage mechanism was controlled by the 2H, ds~ H~ step. Kinetic parameters for the mechanism were quantitatively determined including the surface coverage with adsorbed atomic hydrogen. A Langmuir adsorption isotherm resulted from the relationship between surface coverage with atomic hydrogen at equilibrium and the partial pressure of molecular hydrogen above the solution.It has been shown in a previous study of the effect of hydrogen pressure on the overvoltage on bright platinum (1) that pressure effects can be used to determine kinetic parameters and to establish a reasonable reaction mechanism. In the investigation reported here pressure effects on hydrogen formation and ionization reactions on bright rhodium were studied. By using this metal in rapidly stirred, strong acid solution, diffusion effects were virtually eliminated, and it was possible to make a quantitative determination of the kinetic parameters.