Charge-state-dependent diffusion and carrier-emission-limited drift of iron in silicon.
Charge-state-dependent diffusion and carrier-emission-limited drift of iron in silicon.
复制标题
硅中铁的电荷态相关扩散和载流子发射限制漂移。
作者：
Heiser;Mesli
研究了硅中铁在低温退火过程中的行为。电场对底层缺陷反应的影响进行了详细说明。深度分布表明，在470 K以下，Fe发生了外扩散，没有沉淀析出。在电场的存在下，动力学有很大的不同，可以理解的载流子发射限制铁漂移。这种机制的后果进行了讨论。外扩散和漂移的数据表明一个电荷状态依赖的扩散机制，与普遍接受的缺乏任何电荷状态的影响。
The behavior of iron in silicon during low-temperature annealing was studied. The influence of electric fields on the underlying defect reactions is detailed. The depth profiles reveal ${mathrm{Fe}}_{mathit{i}}$ outdiffusion and no precipitation in the bulk up to 470 K. In the presence of electric fields, the kinetics differ considerably and can be understood in terms of carrier-emission-limited iron drift. Consequences of this mechanism are discussed. The outdiffusion and drift data indicate a charge-state-dependent diffusion mechanism, in contrast to the generally accepted lack of any charge-state effect.