Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
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DOI：
10.1126/science.aai8142
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发表时间：
2017-07-21
期刊：
影响因子：
56.9
通讯作者：
Claessen, R.
中科院分区：
文献类型：
--
作者：
Reis, F.;Li, G.;Claessen, R.
量子旋转大厅的材料具有无耗散自旋电流的革命装置的承诺，但由于较小的能量差距而需要低温温度。从理论上讲，在这里我们表明，在利用原子旋转轨耦合的范式中，可以实现具有较大能量差距的室温状态。该概念基于高原子数元素的底物支持的单层，并且在实验上被实现为绝缘硅碳化硅基板SIC（0001）的二晶蜂窝晶格。使用扫描隧道光谱法，我们检测到与理论一致的0.8电子伏特和导电边缘状态相似的间隙。我们结合的理论和实验结果证明了量子旋转大厅宽间隙方案的一个概念，该场景中的化学电位位于全球系统间隙中，从而确保了稳健的边缘电导。
Quantum spin Hall materials hold the promise of revolutionary devices with dissipationless spin currents but have required cryogenic temperatures owing to small energy gaps. Here we show theoretically that a room-temperature regime with a large energy gap may be achievable within a paradigm that exploits the atomic spin-orbit coupling. The concept is based on a substrate-supported monolayer of a high-atomic number element and is experimentally realized as a bismuth honeycomb lattice on top of the insulating silicon carbide substrate SiC(0001). Using scanning tunneling spectroscopy, we detect a gap of similar to 0.8 electron volt and conductive edge states consistent with theory. Our combined theoretical and experimental results demonstrate a concept for a quantum spin Hall wide-gap scenario, where the chemical potential resides in the global system gap, ensuring robust edge conductance.