Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment
Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment
复制标题
评估适用于极高辐射环境的大面积 n-in-p 硅传感器的块状和带状特性
DOI：
10.1016/j.nima.2010.04.093
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Bohm J
中科院分区：
文献类型：
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作者：
Bohm J
ATLAS合作研发小组“开发用于极高辐射环境的n-in-p硅传感器”开发了单面p型9.75cm×9.75cm传感器，带有n型读出条，其辐射耐受性可达到超大型强子对撞机中预期的10151-MeV中子当量（neq）/cm2注量。本文介绍了滨松光子学 (Hamamatsu Photonics) 制造的 19 种新型非辐照传感器的体和条带参数特性评估的汇编结果。照射前经过详细验证，传感器符合要求的技术规范。各种参数的反向偏压依赖性、测试电容的频率依赖性以及超过 23,000 个条带扫描，作为整个传感器区域的参数均匀性和条带质量测试，已在石溪大学、剑桥大学、日内瓦大学、CR 科学院和布拉格查尔斯大学进行。所有测试条上均未观察到开口、短路或针孔，这证实了滨松光子学制造的传感器的高质量。
The ATLAS collaboration R&D group “Development of n-in-p Silicon Sensors for very high radiation environment” has developed single-sided p-type 9.75cm×9.75cm sensors with an n-type readout strips having radiation tolerance against the 10151-MeV neutron equivalent (neq)/cm2fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence of various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole sensor area have been carried out at Stony Brook University, Cambridge University, University of Geneva, and Academy of Sciences of CR and Charles University in Prague. No openings, shorts, or pinholes were observed on all tested strips, confirming the high quality of sensors made by Hamamatsu Photonics.