Electronic and local structures of BiFeO3 films
Electronic and local structures of BiFeO3 films
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DOI：
10.1088/0953-8984/23/1/015902
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发表时间：
2011-01
期刊：
影响因子：
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通讯作者：
Yasuhiro Yoneda;W. Sakamoto
中科院分区：
文献类型：
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作者：
Yasuhiro Yoneda;W. Sakamoto
采用x射线吸收精细结构（XAFS）研究了化学溶液沉积法制备的BiFeO3 （BFO）、BiFeO3 - pbtio3固溶体（BFO - pt）和mn掺杂BFO - pt （BFM-PT）薄膜的电子结构。由于Fe2 +和Fe3 +的价态混合，BiFeO3显示出较大的漏电流。BFO薄膜具有钝性吸收边跳变，表明铁离子的电荷波动状态。BFO-PT和BFM-PT薄膜具有尖锐的吸收边缘，并且吸收能量向相反的能量转移。铁离子的价态波动与漏电流特性密切相关。电荷波动的BFO薄膜具有泄漏特性，而电荷不波动的BFO - pt和BFM-PT薄膜具有改善的泄漏电流特性。铁离子的价涨落可以通过锰取代和制取固溶体来控制。
The electronic structure of BiFeO3 (BFO), BiFeO3–PbTiO3 solid solution (BFO–PT), and Mn-doped BFO–PT (BFM–PT) films fabricated by chemical solution deposition was investigated by x-ray absorption fine structure (XAFS). The BiFeO3 shows a large leakage current owing to the mixed valance state of Fe2 + and Fe3 + . The BFO film has a blunt absorption edge jump indicating the charge fluctuated state of the iron ions. The BFO–PT and BFM–PT films have sharp absorption edges, and the absorption energy of these films shifted to opposite energy. The valence fluctuation of the iron ions was closely connected with the leakage current properties. The charge fluctuated BFO film showed a leaky feature, and the charge unfluctuated BFO–PT and BFM–PT films had improved leakage current properties. The valence fluctuation of the iron ions can be controlled by Mn substitution and by making solid solutions.