Cyclic Block Copolymers for Controlling Feature Sizes in Block Copolymer Lithography
Cyclic Block Copolymers for Controlling Feature Sizes in Block Copolymer Lithography
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DOI:
10.1021/nn304217y
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发表时间:
2012-12-01
期刊:
影响因子:
17.1
通讯作者:
Hawker, Craig J.
中科院分区:
文献类型:
--
作者:
Poelma, Justin E.;Ono, Kosuke;Hawker, Craig J.
Block copolymer lithography holds promise as a next-generation technique to achieve the sub-20 nm feature sizes demanded by semiconductor roadmaps. While molecular weight and block immiscibility have traditionally been used to control feature size, this study demonstrates that macromolecular architecture is also a powerful tool for tuning domain spacing. To demonstrate this concept, a new synthetic strategy for cyclic block polymers based on highly efficient "click" coupling of difunctional linear chains is developed, and the thin film self-assembly of cyclic polystyrene-block-polyethylene oxide (cPS-b-PEO) is compared with the corresponding linear analogues. The reduced hydrodynamic radii of the cyclic systems result in similar to 30% decrease in domain spacing over the corresponding linear polymers.