Room-Temperature Epitaxial Growth of (Li,Ni)O Thin Film with Li Content up to 60 mol %
Room-Temperature Epitaxial Growth of (Li,Ni)O Thin Film with Li Content up to 60 mol %
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室温%20外延%20生长%20of%20(Li,Ni)O%20薄%20薄膜%20with%20Li%20含量%20up%20to%2060%20mol%20%
DOI：
10.1143/jjap.49.108001
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
M. Yoshimoto
中科院分区：
文献类型：
--
作者：
N. Shiraishi;Yushi Kato;H. Arai;Nobuo Tsuchimine;Susumu Kobayashi;M. Mitsuhashi;M. Soga;S. Kaneko;M. Yoshimoto
采用脉冲激光沉积（PLD）技术，在超光滑蓝宝石（0001）衬底上制备了Li含量高达60mol%的NiO薄膜。通过原位反射高能电子衍射（RHEED）和非原位X射线衍射（XRD）研究发现，室温下沉积的含60 mol % Li的立方NiO薄膜可以以（111）取向外延生长，而在200 °C相同气氛下沉积时，薄膜变成多晶。这些结果表明，可能的探索新的氧化物膜的生长方法，使用RT PLD工艺。
NiO thin films containing up to 60 mol % Li were deposited on an ultra smooth sapphire (0001) substrate at room-temperature (RT) by the pulsed laser deposition (PLD) process. From in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD), it was found that the cubic NiO thin film containing 60 mol % Li, deposited at RT, could be epitaxially grown with (111) orientation; however the film became polycrystalline when deposited at 200 °C under the same atmosphere. These results indicate the possible exploration of novel growth of the oxide films using RT PLD process.