Ion-beam synthesis and growth mechanism of diamond-like materials
Ion-beam synthesis and growth mechanism of diamond-like materials
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DOI：
10.1007/s00339-002-2063-7
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发表时间：
2003-06
期刊：
影响因子：
--
通讯作者：
C. Ronning
中科院分区：
文献类型：
--
作者：
C. Ronning
Opposite to most other deposition methods, the dominating nucleation and growth mechanism during ion-beam deposition of energetic ions in the range between 10 eV and 10 keV occurs in a region of a few nanometers below the surface of the growing film. This process is called ‘subplantation’ – emphasizing the implantation of ions into a subsurface region. Ordering and phase formation is a result of the interaction of the deposited ions with the solid state that takes place within the short time scale of femto- and picoseconds. This extreme non-equilibrium process can result in metastable amorphous or crystalline structures. This review will present several examples of the influence of the deposition parameters on the properties of diamond-like materials synthesized using mass-selected ion-beam deposition. Furthermore, several existing models of the deposition process will be presented and critically discussed.
